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The frequency of the planning cycle is probably greater in the fashion industry than any other because of its seasonal nature. Changing customer preferences ensures a perpetual drive for change. Volatility in terms of the seasonal variety of products offered and the speeds of change in fashions require skill, creativity, a propensity for risk taking and in-depth knowledge of end-user requirements in order for companies to plan effectively, and implement and control what is being offered in any given season. Traditionally companies have planned for two seasons, autumn/winter and spring/summer. However, many are now moving towards the incorporation of mid-season ranges. For some this will mean a totally new set of garments, accessories, etc. and for others it will merely involve adding top-up variety to the major lines that were introduced at the beginning of the season. At every stage in the planning cycle the team, which may comprise any combination of textile and/or fashion designers, production managers, sales-people, buyers, merchandisers and store personnel, will focus on the permutation of fashions being offered. The following terms are used in the example below which highlights the two major stages.

SP E C I A L P OP U L AT ION I SS U E S ETHNIC DIVERSITY: VARIATIONS IN ASSESSMENT AND TREATMENT Increased research attention is being given to the evidence of substance abuse intervention effectiveness with ethnic minority populations (Mercado, 2000; Rotunda et al, 2001) Several initial findings relate to interventions reviewed here Project MATCH results have been analyzed by self-reported Hispanic/ Latino identification In general, Latino participant outcomes paralleled non-Latino outcomes with CBT and MET interventions, but had lower outcomes for the TSF intervention (primarily more drinking per occasion than non-Hispanic Whites) Results confirmed existing findings that Latino treatment-seeking alcoholics are less likely to attend AA than similar nonLatinos, but found that those Latino participants who did attend TS groups reported higher involvement in the groups (Arroyo, Miller, & Tonigan, 2003).

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is satis ed for the speci c circle U(u, v) that is used for Gabriel graph construction; that is, node u keeps the edge if the circle U(u, v) is empty. Two cases arise if the circle is not empty. Node u removes the edge (u, v) if all nodes found in the circle are located on both sides of the line segment uv. If these nodes are lying on one side only, the node w maximizing the angle uwv is considered. The edge is kept iff each neighbor node x of u and v satis es uvw + uxv < .

where k Boltzmann s constant T temperature of lm, K R resistance of lm, V DC voltage applied across lm, IR f frequency 0 k ; a; b constants characterizing current noise spectrum The rst term corresponds to the thermal noise and the second term corresponds to the current noise. In most cases, the rst term is negligible because the current noise dominates. In aluminum lms, the current noise is relatively small. Therefore, the measurement of current noise may need special attention. In general, the current noise spectral density of continuous metal thin lms at room temperature follows Hooge s equation, Sc f gV b g IR b Nc f a Nc f a 5:1:15

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39 S S Iyer and C Ting, Electromigration Lifetime Studies of Submicrometer Linewidth Al-Cu Conductors, IEEE Trans Electron Devices, vol ED-31, no 10, pp 1468 1471, Oct 1984 40 J Chern, W G Oldham, and N Cheung, Contact Electromigration Induced Leakage Failure in Aluminium-Silicon to Silicon Contacts, IEEE Trans Electron Devices, vol ED-32, no 4, pp 1341 1346, July 1985 41 J Chern, W G Oldham, and N Cheung, Electromigration in Al-Si Contacts Induced Open-Circuit Failure, IEEE Trans Electron Devices, vol ED-31, no 9, pp 1256 1261, Sept 1986 42 S D Steenwyk and E F Kankowski, Electromigration in Aluminium to Tantalum Silicide Contacts, IRPS, pp 30 37, 1986 43 G D Giacomo, Electromigration Depletion in Pb-Sn Films, IRPS, pp 72 76, 1979 44 S S Iyer and C Ting, Electromigration Study on the Al-Cu/Ti/Al-Cu Systems, IRPS, pp 273 274, 1981 45 E Levine and J.

Kitchen, Electromigration-Induced Damage and Structural Change in Cr-Al/Cu and Al/Cu Interconnection Lines, IRPS, pp 242 248, 1984 46 W Hasse, J Schulte, and J Grawl, Electromigration of Silicon and Phosphorous in Tantalum Polycide Interconnections, IEEE Trans Electron Devices, vol ED-34, no 3, pp 659 663, 1987 47 D K Sadana, J M Towner, M H Norcott, and R C Ellwanger, Some TEM Observations on Electromigrated Al and Al-Alloy Interconnects, IRPS, pp 38 43, 1986 48 B Grabe and H U Screiber, Lifetime and Drift Velocity Analysis for Electromigration in Sputtered Al Films, Multilayers and Alloys, Solid State Electron, vol 26, pp 1023 1032, 1983 49 J P Tardy and K N Tu, Interdiffusion and Marker Analysis for Electromigration in Aluminium Titanium Thin Film Bilayers, paper presented at the Electronic Materials Conference, June 1984, p 12 50 C F Dunn, F R Brotzen, and J W.

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