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In that work it was also shown that, given factors such as pulse width and energy, the compression, K, is more ef cient for pumping pulses with leading edges having a steeper-than2 Gaussian pro le In particular, for P * t exp( t2 =1:5tP ) we obtain K 24:8 at t 0:5 ns and EL 6 mJ.

The following table shows the attribute values for the two DEVELOPER objects. DeveloperId Dr. Frankenstein Igor FirstName Ted Igor LastName Frankenstein Johnson PROJECT_ROLE Role1 Role2

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In 2004 the semiconductor industry reliably crossed the 100-nm fabrication barrier, and manufacturers were able to place 100 million transistors on a chip, but from 2005 onward, major challenges were expected to begin to materialize, according to observers. Continued improvements in lithography have resulted in integrated circuits (ICs) with linewidths that are less than 1 m (1000 nm): This work is often called nanotechnology, especially if/when the 100-nm barrier is crossed.8 However, the challenge arises when scientists seek to create structures less than 100 nm in two or three dimensions [22]. Submicron lithography is a useful technique, but it is equally clear that conventional lithography will not permit the building of semiconductor devices in which individual dopant atoms are located at speci c lattice sites: Many of the exponentially improving trends in computer hardware capability have remained operative for the last 50 years, and there is fairly widespread belief that these trends are likely to continue for a number of years, but thereafter conventional lithography will start to reach its limits [7]. There are challenges in the area of the gate dielectric, gate electrodes, substrate and device structure, and device interconnects [23]. Speci cally, (i) there are the power implications of Moore s law9; (ii) two major gaps in the EDA (electronic design automation) chain, at the architectural and the physical levels; and, (iii) the deep-submicron physical e ects that jeopardize the separation of design and manufacturing [24]. To continue to follow (and/or exceed) the performance goals of Moore s law, one needs to develop new manufacturing techniques and approaches that will let one build computer systems with mole quantities of logic elements that are molecular in both size and precision and are interconnected in complex patterns, in an inexpensive manner [7].

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If you don t get the crop marquee right the first time, you can move, scale, or rotate it at will. Here s what you do: Drag inside the crop marquee to move it. Drag one of the square handles to resize the marquee. You can Shift-drag a handle to scale the marquee proportionally (the same percentage vertically and horizontally). Drag outside the crop marquee to rotate it, as explained in the next section. This may strike you as weird at first, but it works wonderfully. Drag the origin point (labeled in Figure 3-28) to change the center of a rotation.

Hibernate: select albums0_.user_userName as user7_1_, albums0_.id as id1_, albums0_.id as id2_0_, albums0_.user_userName as user7_2_0_, albums0_.name as name2_0_, albums0_.description as descript4_2_0_, albums0_.creationDate as creation5_2_0_, albums0_.labels as labels2_0_, albums0_.DTYPE as DTYPE2_0_ from Album albums0_ where albums0_.user_userName= .....

Normal date version: 5/10/2005 8:03:13 PM Double version: 38482.8355671296

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