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In this chapter, you learned how to create the three different types of lists. You also got a taste for nesting these elements to create a multilevel list. Lists are an often underutilized block-level element, and one that can help you convey you message more clearly. You are well on your way to having mastered the elements of HTML 4.

Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, September 2000 p 239 51 Voldman S, Juliano P, Schmidt N, Botula A, Johnson R, Lanzeratti L, et al ESD robustness of a silicon germanium BiCMOS technology Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) Symposium, September, 2000 p 214 17 Voldman S, Lanzerotti LD, Johnson R Emitter base junction ESD reliability of an epitaxial base silicon germanium hetero-junction transistor Proceedings of the International Physical and Failure Analysis of Integrated Circuits (IPFA), July 2001 p 79 84 Voldman S, Lanzerotti LD, Johnson RA In uence of process and device design on ESD sensitivity of a silicon germanium hetero-junction bipolar transistor Proceedings of the Electrical Overstress/ Electrostatic Discharge (EOS/ESD) Symposium, 2001 p 364 72 Voldman S, Botula A, Hui D, Juliano P Silicon germanium hetero-junction bipolar transistor ESD power clamps and the Johnson Limit.

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, 2003) have found support for the notion that parents perceptions of their children s sport or physical competence are predictive of their children s actual involvement and performance in sport and physical activity Again, however, the process or mechanisms by which parents perceptions actually affect children s selfperceptions have not been clearly established Based on Eccles s (2005; Eccles et al, 1998) expectancy-value model, it would be hypothesized that parents values, beliefs, perceptions, and expectancies are conveyed to children through the behaviors that parents exhibit toward and with their children The research corresponding to the link between parents belief and value systems and their behaviors is reviewed in the next section.

Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2001 p 326 36 Voldman S Variable trigger-voltage ESD power clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fMAX) silicon germanium hetero-junction bipolar transistor with carbon incorporation Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, October 2002 p 52 61 Voldman S, Ronan B, Ames S, Van Laecke A, Rascoe J, Lanzerotti L, et al Test methods, test techniques and failure criteria for evaluation of ESD degradation of analog and radio frequency (RF) technology Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, October 2002 p 92 100 Ronan B, Voldman S, Lanzerotti L, Rascoe J, Sheridan D, Rajendran K High current transmission line pulse (TLP) and ESD characterization of a silicon germanium hetero-junction bipolar transistor with carbon incorporation Proceedings of the International Reliability Physics Symposium (IRPS), 2002 p 175 83 Voldman S.

Variable trigger-voltage ESD power clamps for mixed voltage applications using a 120 GHz/100 GHz (fT/fMAX) silicon germanium heterojunction bipolar transistor with carbon incorporation Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, October 2002 p 52 61 Voldman S, Gebreselasie E Low-voltage diode-con gured SiGe:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (fT/fMAX) SiGe:C HBT device Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2004 p 57 66 Voldman S, Strang S, Jordan D A design system for auto-generation of ESD circuits Proceedings of the International Cadence Users Group, September, 2002 Voldman S, Strang S, Jordan D An automated electrostatic discharge computer-aided design system with the incorporation of hierarchical parameterized cells in BiCMOS analog and RF technology for mixed signal applications Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, October 2002 p 296 305 Voldman S, Perez CN, Watson A.

Guard rings: theory, experimental quanti cation and design Proceedings of the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, 2005 p 131 40 Perez CN, Voldman S Method of forming a guard ring parameterized cell structure in a hierarchical parameterized cell design, checking and veri cation system US Patent Application 20040268284 (December 30, 2004) Gebreselasie E, Sauter W, St Onge S, Voldman S ESD structures and circuits under bond pads for RF BiCMOS silicon germanium and RF CMOS technology Proceedings of the Taiwan Electrostatic Discharge Conference (T-ESDC), 2005 p 73 8 Voldman S, Lanzerotti LD, Ronan B, St Onge S, Dunn J The in uence of process and design of sub-collectors on the ESD robustness of ESD structures and silicon germanium heterojunction.

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